Correlation Between Oxidant Concentration and Morphological Properties of Silicon Nanowires Obtained by Silver-Assist Electroless Etching

B. Moumni, A. B. Jaballah
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引用次数: 1

Abstract

In this work, a correlation between oxidant concentration and the morphological changes of silicon nanowires formed by a two-step silver-assist electroless etching method is established. It reveals that a textured silicon surface appears for samples etched at relatively H2O2 concentration lower than 2%. However, The dynamic and kinetics of silicon nanowires for different H2O2 concentration (5%, 7% and 8%) are studied by scanning electron microscopy. We found that the thickness of etched silicon nanowires as a function of time fallows a linear law. The length of silicon nanowires is not only H2O2 concentration dependent but a critical is necessary to overcome length saturation. We prove also that the oxidation rate of silicon facing Ag particles can limit the dynamic of wire formation, due to the generation of silicon hexafluoride ion (SiF6)2-.
氧化剂浓度与银辅助化学蚀刻硅纳米线形态性质的关系
本文建立了氧化浓度与两步银辅助化学刻蚀法制备的硅纳米线形貌变化之间的关系。结果表明,在相对H2O2浓度低于2%的条件下,蚀刻样品出现了织构硅表面。通过扫描电镜研究了不同H2O2浓度(5%、7%和8%)下硅纳米线的动力学和动力学。我们发现蚀刻硅纳米线的厚度随时间的变化遵循线性规律。硅纳米线的长度不仅与H2O2浓度有关,而且是克服长度饱和的必要条件。我们还证明,由于六氟化硅离子(SiF6)2-的生成,硅面银颗粒的氧化速率可以限制线的形成动态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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