Organic Non-Volatile Memory Device: Floating-Gate Organic Thin Film Transistor

Cheng-Long Wu, Jian-hong Yang, Shui-Ying Jia, Xue‐yuan Cai, Xiaoyan Sheng
{"title":"Organic Non-Volatile Memory Device: Floating-Gate Organic Thin Film Transistor","authors":"Cheng-Long Wu, Jian-hong Yang, Shui-Ying Jia, Xue‐yuan Cai, Xiaoyan Sheng","doi":"10.3969/J.ISSN.1005-9490.2011.04.001","DOIUrl":null,"url":null,"abstract":"A new structure is proposed for organic thin film transistors (OTFT) and the operation of the device is presented. The threshold voltage of this device can be adjusted by controlling the quantity of electric charge on floating gate, and the different threshold voltages can be used to store two different states: ”0” and ”1”. So this device can be used as organic non-volatile memory device. This device is studied by the method of numeric simulation, and the study shows this memory device has a large memory window about 4 V and good programmable memory characteristics. This new structure memory device can be widely used in the filed of information storage.","PeriodicalId":10074,"journal":{"name":"电子器件","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"电子器件","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.3969/J.ISSN.1005-9490.2011.04.001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A new structure is proposed for organic thin film transistors (OTFT) and the operation of the device is presented. The threshold voltage of this device can be adjusted by controlling the quantity of electric charge on floating gate, and the different threshold voltages can be used to store two different states: ”0” and ”1”. So this device can be used as organic non-volatile memory device. This device is studied by the method of numeric simulation, and the study shows this memory device has a large memory window about 4 V and good programmable memory characteristics. This new structure memory device can be widely used in the filed of information storage.
有机非易失性存储器件:浮栅有机薄膜晶体管
提出了一种新的有机薄膜晶体管结构,并给出了器件的工作原理。该器件的阈值电压可以通过控制浮栅上的电荷量来调节,不同的阈值电压可以存储“0”和“1”两种不同的状态。因此,该器件可作为有机非易失性存储器件。通过数值仿真的方法对该器件进行了研究,研究表明该器件具有约4v的大存储窗口和良好的可编程存储特性。这种新型结构存储器件在信息存储领域具有广泛的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
电子器件
电子器件 电子学
自引率
0.00%
发文量
7077
期刊介绍:
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信