A 3.1–10.6 GHz ultra-wideband 0.18-µm CMOS low-noise amplifier with micromachined inductors

Abstract

A 3.1–10.6 GHz ultra-wideband (UWB) 0.18-µm CMOS low-noise amplifier using micromachined inductors is proposed in this paper. This LNA consists of two stages, the first stage is the cascode topology with shunt-series feedback for bandwidth enhancement, and the second stage is the common-source topology with shunt-series feedback for further bandwidth extended. To improve LNA performance in terms of gain and NF, the CMOS compatible micromachined inductors are adopted in this work. By using these techniques, this LNA achieves the 3-dB bandwidth from 3.1–10.6 GHz, and the peak gain is 19 dB. The dc power consumption and lowest noise figure of this LNA is 14.3 mW and 2.4 dB, respectively.