Optical and Other Measurement Techniques of Carrier Lifetime in Semiconductors

Abstract

In this paper, various methods for characterization of semiconductor charge carrier lifetime are reviewed and an optical technique is described in detail. This technique is contactless, all-optical and based upon measurements of free carrier absorption transients by an infrared probe beam following electron-hole pair excitation by a pulsed laser beam. Main features are a direct probing of the excess carrier density coupled with a homogeneous carrier distribution within the sample, enabling precision studies of different recombination mechanisms. The method is capable of measuring the lifetime over a broad range of injections (10 13 -10 18 cm -3 ) probing the minority carrier lifetime, the high injection lifetime and Auger recombination, as well as the transition between these ranges. Performance and limitations of the technique, such as lateral resolution, are addressed while application of the technique for lifetime mapping and effects of surface recombination are also outlined. Results from detailed studies of the injection dependence yield good agreement with the Shockley-Read-Hall theory, whereas the coefficient for Auger recombination shows an apparent shift to a higher value, with respect to the traditionally accepted value, at carrier densities below 2×10 17 cm -3 . Data also indicate an increased value of the coefficient for bimolecular recombination from the generally accepted value. Measurement on an electron irradiated wafer and wafers of exceptionally high carrier lifetimes are also discussed within the framework of different recombination mechanisms.