Effects of applied stress on the dielectric properties of PLZT thin films

Abstract

The dielectric properties of electrooptic thin films were varied by altering the stresses placed upon the films. Selected thin films in the lanthanum-modified lead zirconate titanate system (PLZT) were produced by using the dip-coating process and applying various stresses. Comparisons were made among thin films under mechanically applied stresses of different magnitude. Properties measured were dielectric constant, saturation polarization, remanent polarization, coercive field and d-spacing. The effects of the applied stresses on the physical and electrical properties of the films are discussed.