Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs

IF 0.4 Q4 PHYSICS, NUCLEAR

Nuclear Physics and Atomic Energy Pub Date : 2023-03-25 DOI:10.15407/jnpae2023.01.027

T.I. Mosiuk, R. Vernydub, P. Lytovchenko, Yu.B. Myroshnichenko, D. Stratilat, V. Tartachnyk, V. Shlapatska

引用次数: 0

Abstract

We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range of 77 ÷ 150 K, areas of negative differential resistance, as well as a fine structure of radiation spectra, were detected. The results of the influence of electron irradiation (Ee = 2 MeV) on electroluminescence characteristics intensity and quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed.

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E = 2 MeV电子辐照对绿色InGaN/GaN led电物理和光学特性的影响

我们研究了基于In0.21Ga0.79N固溶体的量子点маde发光二极管(led)。在77 ~ 300 K范围内进行了电流电压特性和电致发光特性的测量。在77 ~ 150 K范围内的电流-电压特性上，检测到负差分电阻区，以及辐射光谱的精细结构。给出了电子辐照(Ee = 2 MeV)对所研究样品电致发光特性、强度和量子产率的影响;揭示了辐照led发光强度随温度变化的特征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nuclear Physics and Atomic Energy PHYSICS, NUCLEAR-

CiteScore

0.70

自引率

33.30%

发文量

审稿时长

19 weeks

期刊介绍： The journal Nuclear Physics and Atomic Energy presents the publications on Nuclear Physics, Atomic Energy, Radiation Physics, Radioecology, Engineering and Methods of Experiment. The journal includes peer-reviewed articles which are completed works containing new results of theoretical and experimental researches and are of interest for the scientists, postgraduate students, engineers and for the senior students.