Fabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodes

K. V. Bangera, K. Gowrish Rao, G. Shivakumar
{"title":"Fabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodes","authors":"K. V. Bangera, K. Gowrish Rao, G. Shivakumar","doi":"10.1063/1.3587012","DOIUrl":null,"url":null,"abstract":"The study of n-CdTe/p-ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTe/p-ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTe films were optimized by performing a series of trials. The n-CdTe/p-ZnTe heterojunctions were prepared by fist depositing CdTe film on glass substrate and then depositing ZnTe flim on top of CdTe. Detailed electrical characterization of the heterojunction was performed. The conduction in the heterojunction was predominantly due to thermionic emission at low voltages. However at higher voltages space charge limited conduction was found to be dominant. Many technically important parameters such as barrier height, width of the depletion region, carrier concentration etc were deduced by studying the I–V and C-V characteristics of the heterojunction. The activation energies of ZnTe and CdTe were determined by studying the variation of resistance with ambient temperature and a theoretical band diagram of the heterojunction was drawn using Anderson's model.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.3587012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The study of n-CdTe/p-ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTe/p-ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTe films were optimized by performing a series of trials. The n-CdTe/p-ZnTe heterojunctions were prepared by fist depositing CdTe film on glass substrate and then depositing ZnTe flim on top of CdTe. Detailed electrical characterization of the heterojunction was performed. The conduction in the heterojunction was predominantly due to thermionic emission at low voltages. However at higher voltages space charge limited conduction was found to be dominant. Many technically important parameters such as barrier height, width of the depletion region, carrier concentration etc were deduced by studying the I–V and C-V characteristics of the heterojunction. The activation energies of ZnTe and CdTe were determined by studying the variation of resistance with ambient temperature and a theoretical band diagram of the heterojunction was drawn using Anderson's model.
真空沉积n-CdTe/p-ZnTe异质结二极管的制备和电学特性
n-CdTe/p-ZnTe异质结的研究对于单结和串联太阳能电池的制造具有重要意义。本研究采用高真空沉积技术制备了n-CdTe/p-ZnTe异质结二极管。通过一系列试验,优化了制备高质量n-CdTe和p-ZnTe薄膜所需的生长条件。首先在玻璃衬底上沉积CdTe薄膜,然后在CdTe表面沉积ZnTe薄膜,制备了n-CdTe/p-ZnTe异质结。对异质结进行了详细的电学表征。异质结中的传导主要是由于低电压下的热离子发射。然而,在较高的电压下,空间电荷限制传导占主导地位。通过研究异质结的I-V和C-V特性,推导出了势垒高度、耗尽区宽度、载流子浓度等重要技术参数。通过研究ZnTe和CdTe的电阻随环境温度的变化来确定其活化能,并利用Anderson模型绘制了异质结的理论能带图。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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