KLL Dielectronic Recombination of Highly Charged Sulfur and Silicon Ions

Safdar Ali
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Abstract

Dielectronic recombination measurements for highly charged ions were performed at the Stockholm refrigerated electron beam ion trap. We have obtained KLL DR resonance strengths for highly charged H- and He-like sulfur and silicon ions. The experimental results are compared with the theoretical data obtained from GRASP II code. Both the experimental and calculated results agree well within the experimental error bars. Moreover, the dielectronic recombination resonance strengths are used to obtain the new scaling parameters by incorporating our results with the previous measurements and to check the behaviour of scaling formula for H- and He-like isoelectronic sequences.
高荷电硫和硅离子的KLL双电子复合
在斯德哥尔摩冷冻电子束离子阱中对高电荷离子进行了双电子复合测量。我们得到了高荷电氢离子和类氦硫离子和硅离子的KLL DR共振强度。实验结果与从GRASP II代码中得到的理论数据进行了比较。实验结果与计算结果在实验误差条内吻合较好。此外,利用介电子复合共振强度将我们的结果与先前的测量结果结合起来,得到新的标度参数,并检查了H-和he -类等电子序列的标度公式的行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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