Effect of substrate temperature on the optoelectronic properties of Si-C-N:H films

Abstract

Si-C-N thin films were deposited on glass and silicon substrates by plasma-enhanced chemical vapor deposition using hexamethyldisilazane as the main precursor. The optoelectronic properties of the films deposited at different substrate temperature were studied. All the deposited films were X-ray amorphous. The distribution of main chemical bonds Si-C, C-N were almost unchanged but the number of Si-N, C-H, Si-H and N-H bonds decreasedessentially. As a result of such a bond redistribution, the transparency, optical energy gap, nanohardness and elastic modulus of the films decreased.