Twistronics: A Recent Avenue in van der Waals Heterostructures

{"title":"Twistronics: A Recent Avenue in van der Waals Heterostructures","authors":"","doi":"10.33263/proceedings22.044044","DOIUrl":null,"url":null,"abstract":"Two-dimensional (2D) materials, the thinnest form of materials to ever occur in nature, have the potential to dramatically alter and revolutionize our material world. After the discovery of graphene, the most prominent representative of this class of materials, many other 2D crystals have been identified. Even if individual 2D materials own various interesting and unexpected properties, the stacking of such layers leads to ‘artificial vdW solids’ called van der Waals heterostructures (vdW HSs) that result in the emergence of new states of matter with novel functionalities. The vdW HSs not only depend on the combination of different 2D crystal but also on their rotational alignment opening the avenue for a new field called twistronics. Coupling between the two layers depends on the stacking angle, which can be used as an external degree of freedom to tune their optical and electronic properties. Apart from excitonic ground states, 2D transition metal dichalcogenides (TMDs) and their heterostructures offer an excellent platform to explore fascinating higher-order excitations such as trion, biexciton, interlayer exciton, hybrid exciton, moiré exciton, and so on. The emergence of these higher-order excitations mostly depends on the symmetry, temperature, and the band alignment of the heterobilayer systems.","PeriodicalId":90703,"journal":{"name":"Proceedings. International Meshing Roundtable","volume":"14 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. International Meshing Roundtable","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.33263/proceedings22.044044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Two-dimensional (2D) materials, the thinnest form of materials to ever occur in nature, have the potential to dramatically alter and revolutionize our material world. After the discovery of graphene, the most prominent representative of this class of materials, many other 2D crystals have been identified. Even if individual 2D materials own various interesting and unexpected properties, the stacking of such layers leads to ‘artificial vdW solids’ called van der Waals heterostructures (vdW HSs) that result in the emergence of new states of matter with novel functionalities. The vdW HSs not only depend on the combination of different 2D crystal but also on their rotational alignment opening the avenue for a new field called twistronics. Coupling between the two layers depends on the stacking angle, which can be used as an external degree of freedom to tune their optical and electronic properties. Apart from excitonic ground states, 2D transition metal dichalcogenides (TMDs) and their heterostructures offer an excellent platform to explore fascinating higher-order excitations such as trion, biexciton, interlayer exciton, hybrid exciton, moiré exciton, and so on. The emergence of these higher-order excitations mostly depends on the symmetry, temperature, and the band alignment of the heterobilayer systems.
扭转电子学:范德华异质结构的新途径
二维(2D)材料是自然界中最薄的材料形式,有可能极大地改变和彻底改变我们的物质世界。在这类材料中最突出的代表石墨烯被发现之后,许多其他二维晶体也被发现。即使单个2D材料具有各种有趣和意想不到的特性,这些层的堆叠也会导致“人工vdW固体”,称为范德华异质结构(vdW HSs),从而导致具有新功能的新物质状态的出现。vdW HSs不仅依赖于不同二维晶体的组合,而且还依赖于它们的旋转排列,为一个称为双旋电子学的新领域开辟了道路。两层之间的耦合取决于堆叠角度,堆叠角度可以用作调节其光学和电子特性的外部自由度。除了激子基态之外,二维过渡金属二硫族化合物(TMDs)及其异质结构为探索高阶激子(如激子、双激子、层间激子、杂化激子、摩尔激子等)提供了一个很好的平台。这些高阶激发的出现主要取决于异质层系统的对称性、温度和带向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信