Highly c-axis-oriented ScAlN thin films deposited using Sc-Al alloy target

S. Fujii, M. Sumisaka, G. Tang, Yusuke Suzuki, S. Otomo, T. Omori, K. Hashimoto
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引用次数: 4

Abstract

ScAlN thin films were deposited by a conventional radiofrequency (RF)-magnetron sputtering system using two Sc-Al alloy metal targets with different Sc/Al ratios. A 10 h deposition time resulted in highly c-axis-oriented ScAlN thin films with Sc concentrations of 32 at% and 22 at% on Sc0.43-Al0.57 and Sc0.32-Al0.68 targets, respectively. C-axis orientation was lost in thin films deposited on the Sc0.43-Al0.57 target after sputtering times of over 50 h. XDS analysis showed a high-Sc-content ScAlN film with an amorphous phase layer near the Si substrate surface. A seed layer of c-axis-oriented ScAIN allowed for > 50 h deposition on the Sc0.43-Al0.57 target to result in highly c-axis-oriented ScAlN films. A one-port surface acoustic wave (SAW) resonator based on the ScAlN/Si structure has a K2 value of 2.7% at 2 GHz, six times larger than for that based on the AlN/Si structure.
以Sc-Al合金为靶材制备高c轴取向的ScAlN薄膜
采用传统的射频磁控溅射系统,采用两种Sc/Al比不同的Sc-Al合金靶材制备了ScAlN薄膜。在Sc0.43-Al0.57和Sc0.32-Al0.68靶上沉积10 h后,Sc浓度分别为32 at%和22 at%的高c轴取向ScAlN薄膜。溅射时间超过50 h后,沉积在Sc0.43-Al0.57靶材上的薄膜失去了c轴取向。XDS分析表明,在Si衬底表面附近形成了高sc含量的ScAlN薄膜,其非晶相层。c轴取向的ScAIN种子层允许在Sc0.43-Al0.57靶上沉积> 50 h,从而产生高度c轴取向的ScAIN薄膜。基于ScAlN/Si结构的单端口表面声波(SAW)谐振器在2 GHz时的K2值为2.7%,是基于AlN/Si结构的谐振器的6倍。
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