Preparation of nanostructured NiCr film as a terahertz absorption layer by magnetron sputtering and RIE

Jun Gou, Jun Wang, Xing Zheng, D. Gu, Yadong Jiang
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引用次数: 1

Abstract

Nanostructured NiCr thin film was prepared by a combination of magnetron sputtering and reactive ion etching (RIE) in 80 × 60 uncooled infrared focal plane arrays (IRFPA). The surface morphologies and THz absorption characteristics of the IRFPAs were tested with NiCr absorption layers prepared by magnetron sputtering and the combined process respectively. The tests suggested that THz absorption could be effectively enhanced by RIE processes applied to the dielectric substrate and NiCr film, which increased the specific surface area of NiCr absorption film by generating nanoscale structures on upper and lower surfaces.
磁控溅射和RIE法制备纳米结构NiCr薄膜作为太赫兹吸收层
采用磁控溅射和反应离子刻蚀(RIE)相结合的方法,在80 × 60非冷却红外焦平面阵列(IRFPA)上制备了纳米结构NiCr薄膜。分别用磁控溅射法制备NiCr吸收层和复合法制备NiCr吸收层,测试了irfpa的表面形貌和太赫兹吸收特性。实验表明,在介质衬底和NiCr薄膜上应用RIE工艺可以有效地增强太赫兹吸收,通过在上下表面产生纳米级结构来增加NiCr吸收膜的比表面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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