Chun Zhao, T. Zhao, Yixin Cao, Yina Liu, Li Yang, I. Mitrovic, E. G. Lim, Cezhou Zhao
{"title":"Advanced synaptic transistor device towards AI application in hardware perspective","authors":"Chun Zhao, T. Zhao, Yixin Cao, Yina Liu, Li Yang, I. Mitrovic, E. G. Lim, Cezhou Zhao","doi":"10.1109/ICICDT51558.2021.9626511","DOIUrl":null,"url":null,"abstract":"For the past decades, the synaptic devices for the inmemory computing have been widely investigated due to the high-efficiency computing potential and the ability to mimic biological neurobehavior. However, the conventional twoterminal synaptic memristors show drawbacks of resistance reduction caused by large-scale paralleling and asynchronous storage-reading process, which limit its development. Recently, researchers have paid attention to the transistor-like artificial synapse. Due to the existence of insulator layer and the separation of input and read terminals, the three-terminal synaptic transistors are believed to have greater potential towards artificial intelligence (AI) application fields. In this work, a summary of recent progresses and the future challenges of synaptic transistors are discussed.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT51558.2021.9626511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
For the past decades, the synaptic devices for the inmemory computing have been widely investigated due to the high-efficiency computing potential and the ability to mimic biological neurobehavior. However, the conventional twoterminal synaptic memristors show drawbacks of resistance reduction caused by large-scale paralleling and asynchronous storage-reading process, which limit its development. Recently, researchers have paid attention to the transistor-like artificial synapse. Due to the existence of insulator layer and the separation of input and read terminals, the three-terminal synaptic transistors are believed to have greater potential towards artificial intelligence (AI) application fields. In this work, a summary of recent progresses and the future challenges of synaptic transistors are discussed.