Radiation resistance studies of amorphous silicon films

Abstract

A study of hydrogenated amorphous silicon thin films irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15 cm/sup -2/ is presented. The films were characterized using photothermal deflection spectroscopy, transmission and reflection spectroscopy, and photoconductivity and annealing measurements. Large changes were observed in the subband-gap optical absorption for energies between 0.9 and 1.7 eV. The steady-state photoconductivity showed decreases of almost five orders of magnitude for a fluence of 1E15 cm/sup -2/, but the slope of the intensity dependence of the photoconductivity remained almost constant for all fluences. Substantial annealing occurs even at room temperature, and for temperatures greater than 448 K the damage is completely annealed. The data are analyzed to describe the defects and the density of states function.<>