Growth of indium selenide thin films by thermal annealing of In/Se bilayer

Abstract

The In/Se thin films were prepared by thermal evaporation method on glass substrate and were annealed at 200 °C for 1 hr. The indium diffusion into selenium matrix to form indium selenide phases like In2Se3, In4Se3 due to annealing was revealed from the X-ray diffraction study and also supported by the Raman spectra analysis. The optical band gap decreased with annealing as a result of different phase formation as studied from UV-visible spectroscopy. The formation of nano rod like structure in the as-prepared film and their disappearance upon annealing is probed by FESEM characterization.The In/Se thin films were prepared by thermal evaporation method on glass substrate and were annealed at 200 °C for 1 hr. The indium diffusion into selenium matrix to form indium selenide phases like In2Se3, In4Se3 due to annealing was revealed from the X-ray diffraction study and also supported by the Raman spectra analysis. The optical band gap decreased with annealing as a result of different phase formation as studied from UV-visible spectroscopy. The formation of nano rod like structure in the as-prepared film and their disappearance upon annealing is probed by FESEM characterization.