On the performance of Mach-Zehnder-Interferometer (MZI) optical modulator on silicon-on-insulator (SOI)

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI:10.1109/RSM.2015.7355026

H. Razak, H. Haroon, A. Zain, P. Menon, S. Shaari, W. M. Mukhtar

{"title":"On the performance of Mach-Zehnder-Interferometer (MZI) optical modulator on silicon-on-insulator (SOI)","authors":"H. Razak, H. Haroon, A. Zain, P. Menon, S. Shaari, W. M. Mukhtar","doi":"10.1109/RSM.2015.7355026","DOIUrl":null,"url":null,"abstract":"In recent years, there has been a significant interest in the development of optical waveguide modulators using Silicon-On-Insulator (SOI) substrates motivated by the potential to provide a reliable low-cost alternative to other photonic materials. Objective: In this paper, Multimode Interference (MMI) device is used to develop the MZI structure of the optical modulator. Meanwhile, the electrical part of the modulator utilizes the forward biased P-I-N structure. The effect of varying MMI width to the performance of the MZI optical modulator on SOI was investigated. The effect of varying MMI width to the insertion loss (IL), extinction ratio (ER) and modulation efficiency (VπL) of the device were carried out. Results: The investigated MMI widths are 22, 30 and 38 μm. Smallest MMI width, which is 22 μm has recorded the lowest value of insertion loss with 3.30 dB and the best extinction ratio of 25.60 dB. However, the best modulation efficiency was observed for the MMI width of 38 μm with 0.1696 V.cm. Conclusion: Appropriate selection of MMI width is vital to ensure optimum performance of the MZI modulator.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"48 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2015.7355026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

Abstract

In recent years, there has been a significant interest in the development of optical waveguide modulators using Silicon-On-Insulator (SOI) substrates motivated by the potential to provide a reliable low-cost alternative to other photonic materials. Objective: In this paper, Multimode Interference (MMI) device is used to develop the MZI structure of the optical modulator. Meanwhile, the electrical part of the modulator utilizes the forward biased P-I-N structure. The effect of varying MMI width to the performance of the MZI optical modulator on SOI was investigated. The effect of varying MMI width to the insertion loss (IL), extinction ratio (ER) and modulation efficiency (VπL) of the device were carried out. Results: The investigated MMI widths are 22, 30 and 38 μm. Smallest MMI width, which is 22 μm has recorded the lowest value of insertion loss with 3.30 dB and the best extinction ratio of 25.60 dB. However, the best modulation efficiency was observed for the MMI width of 38 μm with 0.1696 V.cm. Conclusion: Appropriate selection of MMI width is vital to ensure optimum performance of the MZI modulator.

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基于绝缘体上硅(SOI)的马赫-曾德尔干涉仪(MZI)光调制器性能研究

近年来，人们对使用绝缘体上硅(SOI)衬底的光波导调制器的发展产生了浓厚的兴趣，因为它有可能提供一种可靠的低成本替代其他光子材料。目的:利用多模干涉(MMI)器件开发光调制器的MZI结构。同时，调制器的电气部分采用正偏P-I-N结构。研究了不同MMI宽度对MZI光调制器SOI性能的影响。研究了不同MMI宽度对器件的插入损耗(IL)、消光比(ER)和调制效率(VπL)的影响。结果:所研究的MMI宽度分别为22、30和38 μm。最小的MMI宽度为22 μm，插入损耗最小，为3.30 dB，消光比最佳，为25.60 dB。当MMI宽度为38 μm时，调制效率为0.1696 V.cm。结论:适当选择MMI宽度对保证MZI调制器的最佳性能至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

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