Simulation of Impact Rupture in Polysilicon Mems

A. Corigliano, F. Cacchione, A. Frangi, S. Zerbini
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引用次数: 5

Abstract

The problem of impact rupture in polysilicon MEMS is addressed in this paper employing a numerical 2D geometrical model of the polycrystal obtained by means of a Voronoi tessellation coupled with a FE mesh. The intergranular and transgranular rupture is simulated by means of cohesive traction-jumps softening laws; accidental drop is simulated through a simplified three-level multi scale approach
多晶硅Mems冲击破裂模拟
本文采用Voronoi镶嵌法和有限元网格法建立了多晶硅微机电系统的二维几何模型,研究了多晶硅微机电系统的冲击破裂问题。采用黏聚牵引-跳跃软化规律模拟了沿晶和穿晶破裂过程;采用简化的三层次多尺度方法对意外跌落进行了模拟
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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