Extraction of Fowler-Nordheim parameters of thin SiO/sub 2/ oxide film including polysilicon gate depletion: validation with an EEPROM memory cell

Abstract

The simulation of EEPROM memory characteristics is fundamental to the design and optimization of low-power non-volatile memory products. This paper presents a new method for extraction of Fowler-Nordheim parameters in a thin (polysilicon-gate) SiO/sub 2/ oxide. It consists of extraction of the oxide thickness from MOS capacitance characteristics including polysilicon-gate depletion. Then, we use the oxide thickness to estimate the electric field for the extraction of the FN current parameters.