{"title":"Triode-mode Envelope Detectors for Near Zero Power Wake-up Receivers","authors":"J. Moody, S. Bowers","doi":"10.1109/mwsym.2019.8700863","DOIUrl":null,"url":null,"abstract":"This work presents an envelope detector topology based upon triode mode transistors operating as a chain of charge pumps. This detector offers superior tunability, performance, and robustness over the Dickson topology. This work utilizes a direct gate bias applied to complementary devices to form a single detector stage. Application of the RF signal directly onto the transistor source node allows for an independent gate bias. The source only injection reduces the total input capacitance of the detector device thereby reducing total input capacitance. This direct gate bias allows strong control over the device channel impedance (RD) which directly modulates the detector input impedance, output noise level and charge time.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"1499-1502"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mwsym.2019.8700863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This work presents an envelope detector topology based upon triode mode transistors operating as a chain of charge pumps. This detector offers superior tunability, performance, and robustness over the Dickson topology. This work utilizes a direct gate bias applied to complementary devices to form a single detector stage. Application of the RF signal directly onto the transistor source node allows for an independent gate bias. The source only injection reduces the total input capacitance of the detector device thereby reducing total input capacitance. This direct gate bias allows strong control over the device channel impedance (RD) which directly modulates the detector input impedance, output noise level and charge time.