Triode-mode Envelope Detectors for Near Zero Power Wake-up Receivers

J. Moody, S. Bowers
{"title":"Triode-mode Envelope Detectors for Near Zero Power Wake-up Receivers","authors":"J. Moody, S. Bowers","doi":"10.1109/mwsym.2019.8700863","DOIUrl":null,"url":null,"abstract":"This work presents an envelope detector topology based upon triode mode transistors operating as a chain of charge pumps. This detector offers superior tunability, performance, and robustness over the Dickson topology. This work utilizes a direct gate bias applied to complementary devices to form a single detector stage. Application of the RF signal directly onto the transistor source node allows for an independent gate bias. The source only injection reduces the total input capacitance of the detector device thereby reducing total input capacitance. This direct gate bias allows strong control over the device channel impedance (RD) which directly modulates the detector input impedance, output noise level and charge time.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"1499-1502"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mwsym.2019.8700863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This work presents an envelope detector topology based upon triode mode transistors operating as a chain of charge pumps. This detector offers superior tunability, performance, and robustness over the Dickson topology. This work utilizes a direct gate bias applied to complementary devices to form a single detector stage. Application of the RF signal directly onto the transistor source node allows for an independent gate bias. The source only injection reduces the total input capacitance of the detector device thereby reducing total input capacitance. This direct gate bias allows strong control over the device channel impedance (RD) which directly modulates the detector input impedance, output noise level and charge time.
近零功率唤醒接收机用三极管包络检测器
这项工作提出了一种基于三极管模式晶体管作为电荷泵链工作的包络探测器拓扑结构。该检测器提供了优于Dickson拓扑的可调性、性能和健壮性。这项工作利用直接门偏置应用于互补器件,形成一个单一的检测器级。射频信号直接应用到晶体管源节点允许独立的栅极偏置。仅源注入减小检测器装置的总输入电容,从而减小总输入电容。这种直接门偏置允许对器件通道阻抗(RD)进行强控制,直接调制检测器输入阻抗、输出噪声电平和充电时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信