Analysing the Sputtered Al Doped ZnO on <111>-Oriented Cu2O Heterojunction Solar Cell with Improved Performance

M. Zamzuri, M. Marina, Rabiah Ahmad, M. Salleh, C. C. Lee, Z. Nooraizedfiza, F. Mohamad, N. Hisyamudin, M. Izaki
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Abstract

Electrodeposited Cu2O/AZO photovoltaic (PV) devices are promising low-cost solar cells. In this research, both layers of Cu2O and AZO heterojunction architectures are studied as a function of AZO target-Cu2O substrate distance during the sputtering process. The Cu2O/AZO PV device has been constructed by electrodeposition of a -p-Cu2O layer on an Au (111)/Si wafer substrate followed by stacking the AZO layer using a sputtering technique. The Cu2O/AZO PV device showed a photovoltaic performance under AM1.5 illumination, and the performance changed depending on the target-substrate distance. It is shown that an increase in target-substrate distance during stacking the AZO layer by sputtering mitigated the damage at the Cu2O/AZO interface. As a result, we were able to improve the Voc and power conversion efficiency from 0.16 V and 0.46 % to 0.30 V and 0.64%, respectively.
提高Cu2O取向异质结太阳能电池性能的溅射Al掺杂ZnO分析
电沉积Cu2O/AZO光伏(PV)器件是一种很有前途的低成本太阳能电池。在本研究中,研究了在溅射过程中,Cu2O和AZO异质结结构层与AZO靶材-Cu2O衬底距离的关系。在Au (111)/Si晶片衬底上电沉积-p-Cu2O层,然后使用溅射技术将AZO层堆叠,从而构建了Cu2O/AZO光伏器件。Cu2O/AZO光伏器件在AM1.5光照条件下具有良好的光电性能,且性能随靶基距离的变化而变化。结果表明,在溅射叠层过程中,增加靶基距离可以减轻Cu2O/AZO界面处的损伤。因此,我们能够将Voc和功率转换效率分别从0.16 V和0.46%提高到0.30 V和0.64%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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