A 300 GHz low-noise amplifier S-MMIC for use in next-generation imaging and communication applications

Abstract

A WR-3 (220–330 GHz) low-noise amplifier (LNA) circuit has been developed for use in next-generation high resolution imaging applications and ultra-high capacity communication links. The submillimeter-wave monolithic integrated circuit (S-MMIC) was realized by using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide topology (GCPW) and cascode transistors, thus leading to a very low noise figure in combination with high gain and large operational bandwidth. The packaged LNA circuit achieved a maximum gain of 29 dB at 314 GHz and more than 26 dB in the frequency range from 252 to 330 GHz. An average room temperature (T = 293 K) noise figure of 6.5 dB was measured between 280 and 330 GHz. Furthermore, the LNA circuit has been used to realize a very compact WR-3 single-chip receiver module, demonstrating an average conversion gain of 6.5 dB and a noise figure of 8.6 dB at the frequency of operation.