Effect of Voltage Bias at MEH-PPV Layer on SPR Wavelength observed during in-situ Measurement Method in Polymer Light Emitting Diode

H. Hendro, M. Djamal, R. Hidayat, D. Kurnia, B. Buchari
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Abstract

The shifting of surface plasmon resonance (SPR) wavelength has been observed during in situ measurement in polymer light emitting diode (pLED). Examination is performed using an pLED sample which has an ITO/PEDOT:PSS/MEH-PPV/Au structure. When the voltage bias is increased from 0 to 9 volt the SPR wavelength shifts from 612 nm to 628 nm and the absorption curve shifts to lower absorbance value. From the theoretical analysis, it can be understood that the change of the SPR dip and the absorption curves correspond to the change of dielectric constant of the MEH-PPV layer. These results show that SPR wavelength depends on the metal and air dielectric constant as well as on the MEH-PPV layer. These results also imply that the SPR wavelength being evaluated can be controlled by varying the voltage bias.
MEH-PPV层电压偏置对聚合物发光二极管原位测量中SPR波长的影响
在聚合物发光二极管(pLED)的原位测量中,观察到表面等离子体共振(SPR)波长的移动。使用具有ITO/PEDOT:PSS/MEH-PPV/Au结构的pLED样品进行检查。当电压偏置从0伏增加到9伏时,SPR波长从612 nm移动到628 nm,吸收曲线向低吸光度值移动。从理论分析可知,SPR倾角和吸收曲线的变化对应于MEH-PPV层介电常数的变化。结果表明,SPR波长不仅与MEH-PPV层有关,还与金属和空气的介电常数有关。这些结果还表明,被评估的SPR波长可以通过改变电压偏置来控制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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