Materials and applications perspectives for Ga2O3

D. Rogers, F. Teherani, P. Bove, É. Sandana
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Abstract

Recently, there has been a surge in interest for the ultra wide bandgap (Eg ~ 4.9 eV) semiconductor gallium oxide (Ga2O3). A key driver for this boom is that single crystal wide area bulk β-Ga2O3 substrates have become commercially available and a variety of methods have been shown to give high quality epitaxial growth. Although Ga2O3 has a number of polymorph forms (α-, β-, γ-, δ- and e) the more stable monoclinic phase (β-Ga2O3) has attracted the most attention. Amongst a whole range of potential applications power/switching electronics, solar-blind photodetectors and solar transparent electrodes offer exciting perspectives. In this talk we give an overview of these applications illustrated with examples from the β-Ga2O3 development work carried out at the French oxide semiconductor epiwafer company, Nanovation, www.nanovation.com.
Ga2O3材料及其应用前景
最近,人们对超宽带隙(Eg ~ 4.9 eV)半导体氧化镓(Ga2O3)的兴趣激增。这种繁荣的一个关键驱动因素是单晶广域体β-Ga2O3衬底已经商品化,各种方法已经被证明可以提供高质量的外延生长。虽然Ga2O3具有多种晶型(α-、β-、γ-、δ-和e),但更稳定的单斜相(β-Ga2O3)引起了人们的广泛关注。在一系列潜在的应用中,电源/开关电子,太阳盲光电探测器和太阳能透明电极提供了令人兴奋的前景。在本次演讲中,我们将以法国氧化物半导体epiwafer公司Nanovation (www.nanovation.com)的β-Ga2O3开发工作为例,对这些应用进行概述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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