Extension of solid immersion lens technology to super-resolution Raman microscopy

E. Ostertag, Anita Lorenz, K. Rebner, R. Kessler, A. Meixner
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引用次数: 3

Abstract

Abstract Scanning Near-Field Optical Microscopy (SNOM) has developed during recent decades into a valuable tool to optically image the surface topology of materials with super-resolution. With aperture-based SNOM systems, the resolution scales with the size of the aperture, but also limits the sensitivity of the detection and thus the application for spectroscopic techniques like Raman SNOM. In this paper we report the extension of solid immersion lens (SIL) technology to Raman SNOM. The hemispherical SIL with a tip on the bottom acts as an apertureless dielectric nanoprobe for simultaneously acquiring topographic and spectroscopic information. The SIL is placed between the sample and the microscope objective of a confocal Raman microscope. The lateral resolution in the Raman mode is validated with a cross section of a semiconductor layer system and, at approximately 180 nm, is beyond the classical diffraction limit of Abbe.
固体浸没透镜技术扩展到超分辨率拉曼显微镜
扫描近场光学显微镜(SNOM)是近几十年来发展起来的一种有价值的超分辨率材料表面拓扑光学成像工具。对于基于孔径的SNOM系统,分辨率随孔径的大小而变化,但也限制了检测的灵敏度,从而限制了拉曼SNOM等光谱技术的应用。本文报道了固体浸没透镜(SIL)技术在拉曼SNOM中的扩展。底部有尖端的半球形SIL充当无孔径介电纳米探针,可同时获取地形和光谱信息。SIL被放置在样品和共聚焦拉曼显微镜的显微镜物镜之间。用半导体层系统的横截面验证了拉曼模式下的横向分辨率,在大约180 nm处,超出了经典的阿贝衍射极限。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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