Reactive Ion etching of TiO2 thin film: The impact of different gaseous

Abstract

Titanium dioxide (TiO₂) is one of a metal oxide material group that shows a promising future in biosensors application. TiO₂ possess both physical and chemical resistant that can extend a device lifespan. However, etching of TiO₂ with very high selectivity is a challenging process in achieving good and desired profile particularly in nanometer scale. In this work, we present the anisotropic etch profile. Three types of ICP-RIE recipes are used i.e. CF₄/O₂, Ar/SF₆ and CF₄/Ar. Prior to that, the TiO₂ sol-gel is deposited on top of SiO₂ layer. All the results are optically and physically characterized by using 3D-surface profilometer and atomic force microscopy (AFM) and finally followed by electrical characterization.