W-Band RF MEMS Double and Triple-Stub Impedance Tuners

T. Vähä‐Heikkilä, J. Varis, J. Tuovinen, G. Rebeiz
{"title":"W-Band RF MEMS Double and Triple-Stub Impedance Tuners","authors":"T. Vähä‐Heikkilä, J. Varis, J. Tuovinen, G. Rebeiz","doi":"10.1109/MTT67880.2005.9387853","DOIUrl":null,"url":null,"abstract":"Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and loadpull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (211) different impedances. Measured ${\\left\\vert\\Gamma_{MAX} \\right\\vert}$ for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"19 1","pages":"923-926"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTT67880.2005.9387853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and loadpull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (211) different impedances. Measured ${\left\vert\Gamma_{MAX} \right\vert}$ for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
w波段射频MEMS双根和三根阻抗调谐器
可重构集成阻抗调谐器已开发用于w波段片上噪声参数和负载拉测量应用。阻抗调谐器基于双根和三根拓扑结构,采用11个开关MEMS电容器,产生2048(211)个不同的阻抗。在2048个可能的阻抗中,双根调谐器在75 GHz和100 GHz下的测量值${\left\vert\Gamma_{MAX} \right\vert}$为0.92和0.82,三根调谐器的测量值为0.92和0.83。据我们所知,这是迄今为止第一个w波段集成阻抗调谐器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信