Improved Piezoelectric MEMS Acoustic Emission Sensors

Yongfang Li, T. Omori, K. Watabe, H. Toshiyoshi
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Abstract

This paper describes two innovative methods for improving the sensitivity of piezoelectric MEMS acoustic emission (AE) sensors. By optimizing the top electrode dimensions and adding a dummy structure to it, the peak sensitivity of the fabricated MEMS AE sensors at resonance can be improved to 148 V/m/s, which is about 10-fold greater than that of sensors with a full-size top electrode. Standard pencil-lead break (PLB) tests are conducted to verify the detection capability of AE waves. As a result, the fabricated single-type piezoelectric MEMS AE sensor, which has a peak sensitivity of 45 V/m/s, is shown to have the same level of detection sensitivity as a commercial bulk piezoelectric AE sensor.
改进的压电MEMS声发射传感器
本文介绍了提高压电MEMS声发射传感器灵敏度的两种创新方法。通过优化顶电极尺寸并在顶电极上添加假体结构,制备的MEMS AE传感器在谐振时的峰值灵敏度可提高到148 V/m/s,是全尺寸顶电极传感器的10倍左右。进行了标准铅笔芯断口(PLB)试验,验证了对声发射波的探测能力。结果表明,制备的单型压电MEMS声发射传感器的峰值灵敏度为45 V/m/s,与商用体压电声发射传感器具有相同的检测灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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