A. Dutron, E. Blanquet, V. Ghetta, R. Madar, C. Bernard
{"title":"Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics","authors":"A. Dutron, E. Blanquet, V. Ghetta, R. Madar, C. Bernard","doi":"10.1051/JPHYSCOL:19955135","DOIUrl":null,"url":null,"abstract":"Low pressure chemical vapor deposition (LPCVD) of Me-Si-N (Me= Re, W, Ta) thin films were investigated for use as diffusion barrier between Cu overlayer and oxidized silicon substrates. Their amorphous or nanocrystalline structure is expected to provide better performance than usual polycrystalline barriers. For the CVD process, gaseous precursors were silane, in situ fabricated metal chloride, ammonia, hydrogen and argon. Preliminary thermodynamic simulations of the Me-Si-N and the CVD Me-Si-N-Cl-H-Ar systems (Me=Re, W, Ta), were combined to the experimental study. The Re-Si-N and W-Si-N layers crystallization temperature was found to be around 1173 K after annealing in vacuum by Rapid Thermal Annealing. Their morphology, thermal stability and resistivity were evaluated as a function of annealing temperature.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Le Journal De Physique Colloques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JPHYSCOL:19955135","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Low pressure chemical vapor deposition (LPCVD) of Me-Si-N (Me= Re, W, Ta) thin films were investigated for use as diffusion barrier between Cu overlayer and oxidized silicon substrates. Their amorphous or nanocrystalline structure is expected to provide better performance than usual polycrystalline barriers. For the CVD process, gaseous precursors were silane, in situ fabricated metal chloride, ammonia, hydrogen and argon. Preliminary thermodynamic simulations of the Me-Si-N and the CVD Me-Si-N-Cl-H-Ar systems (Me=Re, W, Ta), were combined to the experimental study. The Re-Si-N and W-Si-N layers crystallization temperature was found to be around 1173 K after annealing in vacuum by Rapid Thermal Annealing. Their morphology, thermal stability and resistivity were evaluated as a function of annealing temperature.
研究了Me- si - n (Me= Re, W, Ta)薄膜的低压化学气相沉积(LPCVD)作为Cu覆盖层与氧化硅衬底之间的扩散屏障。它们的非晶或纳米晶结构有望提供比通常的多晶势垒更好的性能。对于CVD工艺，气态前驱体是硅烷、原位制备的金属氯化物、氨、氢和氩。对Me- si - n体系和CVD Me- si - n - cl - h - ar体系(Me=Re, W, Ta)进行了初步的热力学模拟。真空快速退火后，Re-Si-N和W-Si-N层的结晶温度在1173 K左右。研究了它们的形貌、热稳定性和电阻率随退火温度的变化。
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