Assessment of WSe2 based BSF layer on CZTSSe solar cell using SCAPS-1D

Shivani Gohri, Jaya Madan, R. Pandey, Rajnish Sharma
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引用次数: 2

Abstract

CZTSSe is one of the emerging materials in the field of solar cell owing to large absorption coefficient, tunable bandgap, and relatively inexpensive production process. Around 12.6% efficiency has been reported for CZTSSe based solar cell in the literature. Surface recombination at the back contact of the solar cell has been considered to be an important limiting factor for the constrained values of efficiency. One of the possible ways to overcome this limitation is to introduce a back surface layer (BSF) in the cell. We in this paper report our results and analyze the same for possible adoption of the BSF layer of tungsten diselenide (WSe2) material in a CZTSSe based solar cell. The results show significant enhancement in open-circuit voltage (VOC), short-circuit current density (JSC) and fill factor (FF) due to introduction of BSF which increases its power conversion efficiency (PCE) from 12.57% to 17.20%. All the simulations in this research work are performed using SCAPS-1D simulator. Present research work may be an important step toward suggesting CZTSSe based solar cell structures with higher values of efficiency than currently being reported in the literature.
利用SCAPS-1D评价CZTSSe太阳能电池WSe2基BSF层
CZTSSe具有吸收系数大、带隙可调、生产工艺相对便宜等优点,是太阳能电池领域的新兴材料之一。文献中报道的基于CZTSSe的太阳能电池的效率约为12.6%。太阳能电池背面接触处的表面复合被认为是影响效率约束值的一个重要限制因素。克服这一限制的一种可能方法是在电池中引入后面层(BSF)。本文报告了我们的结果,并分析了在CZTSSe基太阳能电池中采用二硒化钨(WSe2)材料的BSF层的可能性。结果表明,BSF的引入显著提高了开路电压(VOC)、短路电流密度(JSC)和填充因子(FF),使其功率转换效率(PCE)从12.57%提高到17.20%。本研究工作的所有仿真均使用SCAPS-1D模拟器进行。目前的研究工作可能是朝着提出具有比目前文献报道更高效率值的基于CZTSSe的太阳能电池结构迈出的重要一步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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