Integration and reliability of ultra thin silicon solar cells and modules fabricated using SOM® technology

D. Jawarani, Dewei Xu, Scott Smith, R. Rao, L. Mathew, S. Saha, D. Sarkar, S. Banerjee, P. Ho
{"title":"Integration and reliability of ultra thin silicon solar cells and modules fabricated using SOM® technology","authors":"D. Jawarani, Dewei Xu, Scott Smith, R. Rao, L. Mathew, S. Saha, D. Sarkar, S. Banerjee, P. Ho","doi":"10.4229/27THEUPVSEC2012-3CV.2.37","DOIUrl":null,"url":null,"abstract":"Thin crystalline silicon solar cells are of interest due to significant material cost reduction and potentially high conversion efficiency. We have previously demonstrated a patented, novel exfoliation technology capable of producing large area (156×156 mm) 25 µm thin flexible mono c-Si cells with high efficiencies. In this paper we address the mechanical strength and handling requirements of these foils during wafer transfer, cell processing and module integration. Based on a bi-material foil composed of thin monocrystalline silicon and a supporting substrate fabricated using our novel SOM® (Semiconductor on Metal) kerf-less exfoliation process, closed-form mechanical analyses are introduced and developed to evaluate their strength and fracture behaviors. These analyses include the thermal stresses in the composite films and the effect of surface texturing on the fracture behavior of silicon in these foils. Functional cells were fabricated and module reliability results that include thermal shock and highly accelerated stress tests (HAST) are also shown in this paper.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4229/27THEUPVSEC2012-3CV.2.37","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Thin crystalline silicon solar cells are of interest due to significant material cost reduction and potentially high conversion efficiency. We have previously demonstrated a patented, novel exfoliation technology capable of producing large area (156×156 mm) 25 µm thin flexible mono c-Si cells with high efficiencies. In this paper we address the mechanical strength and handling requirements of these foils during wafer transfer, cell processing and module integration. Based on a bi-material foil composed of thin monocrystalline silicon and a supporting substrate fabricated using our novel SOM® (Semiconductor on Metal) kerf-less exfoliation process, closed-form mechanical analyses are introduced and developed to evaluate their strength and fracture behaviors. These analyses include the thermal stresses in the composite films and the effect of surface texturing on the fracture behavior of silicon in these foils. Functional cells were fabricated and module reliability results that include thermal shock and highly accelerated stress tests (HAST) are also shown in this paper.
采用SOM®技术制造的超薄硅太阳能电池和模块的集成和可靠性
薄晶硅太阳能电池因其显著的材料成本降低和潜在的高转换效率而备受关注。我们之前已经展示了一种专利的新型剥离技术,能够高效地生产大面积(156×156 mm) 25微米薄的柔性单c-Si电池。在本文中,我们讨论了这些箔在晶圆转移,电池加工和模块集成过程中的机械强度和处理要求。基于由单晶硅和支撑衬底组成的双材料箔,采用我们新颖的SOM®(半导体金属)无切口剥落工艺制造,引入并开发了封闭形式的力学分析来评估其强度和断裂行为。这些分析包括复合薄膜中的热应力和表面织构对这些薄膜中硅断裂行为的影响。制作了功能单元,并给出了包括热冲击和高加速应力测试(HAST)在内的模块可靠性结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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