Forming damped LRC parasitic circuits in simultaneously switched CMOS output buffers

T. Gabara, W. Fischer, J. Harrington, W. Troutman
{"title":"Forming damped LRC parasitic circuits in simultaneously switched CMOS output buffers","authors":"T. Gabara, W. Fischer, J. Harrington, W. Troutman","doi":"10.1109/CICC.1996.510558","DOIUrl":null,"url":null,"abstract":"Measurements of a 0.5 /spl mu/m CMOS testchip using several techniques have demonstrated a reduction in the generation of ground bounce. These techniques are: an automatic transistor sizing method that compensates for process, temperature, and supply voltage variations; a self-adjusting internal capacitive load that counteracts the increased switching rate of faster parts; and an integrated resistive element inserted directly into the power and ground leads that dampens the RLC oscillations. Comparison measurements between a conventional buffer and the new buffer have demonstrated that the amplitude and duration of the generated ground bounce has been reduced 2.5/spl times/ and 2/spl times/, respectively. A single external resistor is required to set a reference current.","PeriodicalId":74515,"journal":{"name":"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference","volume":"46 1","pages":"277-280"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"60","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1996.510558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 60

Abstract

Measurements of a 0.5 /spl mu/m CMOS testchip using several techniques have demonstrated a reduction in the generation of ground bounce. These techniques are: an automatic transistor sizing method that compensates for process, temperature, and supply voltage variations; a self-adjusting internal capacitive load that counteracts the increased switching rate of faster parts; and an integrated resistive element inserted directly into the power and ground leads that dampens the RLC oscillations. Comparison measurements between a conventional buffer and the new buffer have demonstrated that the amplitude and duration of the generated ground bounce has been reduced 2.5/spl times/ and 2/spl times/, respectively. A single external resistor is required to set a reference current.
在同步开关CMOS输出缓冲器中形成阻尼LRC寄生电路
使用几种技术对0.5 /spl μ l /m CMOS测试芯片的测量表明,地面反弹的产生减少了。这些技术是:一个自动晶体管尺寸的方法,补偿工艺,温度和电源电压的变化;一个自我调节的内部容性负载,抵消了更快的部分增加的开关率;以及直接插入电源和接地引线的集成电阻元件,以抑制RLC振荡。传统缓冲层和新型缓冲层之间的对比测量表明,产生的地面反弹的幅度和持续时间分别减少了2.5/spl倍和2/spl倍。需要一个单独的外部电阻来设置参考电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
3.80
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信