Hybrid cache architecture with disparate memory technologies

Xiaoxia Wu, Jian Li, Lixin Zhang, W. Speight, R. Rajamony, Yuan Xie
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引用次数: 378

Abstract

Caching techniques have been an efficient mechanism for mitigating the effects of the processor-memory speed gap. Traditional multi-level SRAM-based cache hierarchies, especially in the context of chip multiprocessors (CMPs), present many challenges in area requirements, core-to-cache balance, power consumption, and design complexity. New advancements in technology enable caches to be built from other technologies, such as Embedded DRAM (EDRAM), Magnetic RAM (MRAM), and Phase-change RAM (PRAM), in both 2D chips or 3D stacked chips. Caches fabricated in these technologies offer dramatically different power and performance characteristics when compared with SRAM-based caches, particularly in the areas of access latency, cell density, and overall power consumption. In this paper, we propose to take advantage of the best characteristics that each technology offers, through the use of Hybrid Cache Architecture (HCA) designs. We discuss and evaluate two types of hybrid cache architectures: inter cache Level HCA (LHCA), in which the levels in a cache hierarchy can be made of disparate memory technologies; and intra cache level or cache Region based HCA (RHCA), where a single level of cache can be partitioned into multiple regions, each of a different memory technology. We have studied a number of different HCA architectures and explored the potential of hardware support for intra-cache data movement and power consumption management within HCA caches. Utilizing a full-system simulator that has been validated against real hardware, we demonstrate that an LHCA design can provide a geometric mean 7% IPC improvement over a baseline 3-level SRAM cache design under the same area constraint across a collection of 25 workloads. A more aggressive RHCA-based design provides 12% IPC improvement over the baseline. Finally, a 2-layer 3D cache stack (3DHCA) of high density memory technology within the same chip footprint gives 18% IPC improvement over the baseline. Furthermore, up to 70% reduction in power consumption over a baseline SRAM-only design is achieved.
具有不同内存技术的混合缓存体系结构
缓存技术是缓解处理器-内存速度差距影响的有效机制。传统的基于多层sram的缓存层次结构,特别是在芯片多处理器(cmp)的背景下,在面积要求、核心到缓存平衡、功耗和设计复杂性方面存在许多挑战。技术的新进步使高速缓存能够从其他技术中构建,例如嵌入式DRAM (EDRAM),磁性RAM (MRAM)和相变RAM (PRAM),无论是在2D芯片还是3D堆叠芯片中。与基于sram的缓存相比,用这些技术制造的缓存提供了截然不同的功率和性能特征,特别是在访问延迟、单元密度和总体功耗方面。在本文中,我们建议通过使用混合缓存架构(HCA)设计来利用每种技术提供的最佳特性。我们讨论并评估了两种类型的混合缓存架构:缓存间级HCA (LHCA),其中缓存层次结构中的级别可以由不同的存储技术组成;以及内部缓存级别或基于缓存区域的HCA (RHCA),其中单个缓存级别可以划分为多个区域,每个区域使用不同的内存技术。我们研究了许多不同的HCA架构,并探索了硬件支持缓存内数据移动和HCA缓存内功耗管理的潜力。利用一个针对真实硬件进行验证的全系统模拟器,我们证明了在25个工作负载的集合中,在相同的区域约束下,LHCA设计可以比基线3级SRAM缓存设计提供几何平均7%的IPC改进。更积极的基于rhca的设计提供了12%的IPC改进。最后,在相同的芯片占用空间内,高密度存储器技术的2层3D缓存堆栈(3DHCA)使IPC比基线提高了18%。此外,与仅限sram的基准设计相比,功耗降低了70%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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