Noise figure characterization of a subharmonic graphene FET mixer

M. Andersson, O. Habibpour, J. Vukusic, J. Stake
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引用次数: 4

Abstract

We report on the first room temperature noise figure measurement of a graphene FET subharmonic resistive mixer in the interval fRF = 2-5 GHz. Due to an 8 nm thin Al2O3 gate dielectric it can operate with a conversion loss in the range 20–22 dB at only 0 dBm of local oscillator power. The measurement yields a noise figure close to the conversion loss, thus determining the noise to be thermal in origin, which is promising for cryogenic applications. The general route to lower noise figure is an improvement of the conversion loss.
次谐波石墨烯FET混频器的噪声系数表征
本文报道了石墨烯FET亚谐波阻性混频器在fRF = 2-5 GHz范围内的首次室温噪声系数测量。由于采用8nm薄Al2O3栅极电介质,在本地振荡器功率仅为0 dBm的情况下,转换损耗在20-22 dB范围内。测量产生的噪声值接近转换损耗,从而确定噪声是热源的,这对于低温应用是有希望的。降低噪声系数的一般途径是提高转换损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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