Structural and Electrical Properties of ZnO Varistor with Different Particle Size for Initial Oxides Materials

Nanoscale Reports Pub Date : 2019-04-26 DOI:10.26524/NR1923
S. A. Amin
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引用次数: 5

Abstract

We report here structural, electrical and dielectric properties of ZnO varistors prepared with two different particle sizes for initial starting oxides materials (5 µm and 200 nm). It is found that the particle size of ZnO does not influence the hexagonal wurtzite structure of ZnO, while the lattice parameters, crystalline diameter, grain size and Zn-O bond length are affected. The nonlinear coefficient, breakdown field and barrier height are decreased from 18.6, 1580 V/cm and 1.153 eV for ZnO micro to 410 V/cm, 7.26 and 0.692 eV for ZnO nano.  While, residual voltage and electrical conductivity of upturn region are increased from 2.08 and 2.38x10-5 (Ω.cm)-1 to 4.55 and 3.03x10-5 (Ω.cm)-1. The electrical conductivity increases by increasing temperature for both varistors, and it is higher for ZnO nano than that of ZnO micro.  The character of electrical conductivity against temperature is divided into three different regions over the temperature intervals as follows; (300 K ≤ T ≤ 420 K), (420 K ≤ T ≤ 580 K) and (580 K ≤ T ≤ 620 K), respectively. The activation energy is increased in the first region from 0.141 eV for ZnO micro to 0.183 eV for ZnO nano and it is kept nearly constant in the other two regions. On the other hand, the average conductivity deduced through dielectric measurements is increased from 2.54x10-7 (Ω.cm)-1 for ZnO micro to 49x10-7 (Ω.cm)-1. Similar behavior is obtained for the conductivities of grains and grain boundaries. The dielectric constant decreases as the frequency increases for both varistors, and it is higher for ZnO nano than that of ZnO micro. These results are discussed in terms of free excited energy and strength of link between grains of these varistors.
初始氧化物材料中不同粒径氧化锌压敏电阻的结构和电性能
本文报道了用两种不同粒径的初始氧化物材料(5µm和200 nm)制备ZnO压敏电阻的结构、电学和介电性能。研究发现,ZnO的粒径对ZnO的六方纤锌矿结构没有影响,而晶格参数、晶粒直径、晶粒尺寸和Zn-O键长受到影响。非线性系数、击穿场和势垒高度分别从微ZnO的18.6、1580 V/cm和1.153 eV降低到纳米ZnO的410 V/cm、7.26和0.692 eV。而上向区残余电压和电导率由2.08和2.38x10-5 (Ω.cm)-1增加到4.55和3.03x10-5 (Ω.cm)-1。两种压敏电阻的电导率均随温度升高而升高,且纳米ZnO的电导率高于微ZnO。电导率随温度变化的特性在温度区间内分为三个不同的区域,如下所示:(300 K≤T≤420 K)、(420 K≤T≤580 K)和(580 K≤T≤620 K)。第一个区域的活化能从微氧化锌的0.141 eV增加到纳米氧化锌的0.183 eV,而其他两个区域的活化能基本保持不变。另一方面,通过介电测量得出的ZnO微晶的平均电导率从2.54x10-7 (Ω.cm)-1增加到49x10-7 (Ω.cm)-1。晶粒的电导率和晶界也得到了类似的结果。两种压敏电阻的介电常数均随频率的增加而减小,且纳米ZnO的介电常数高于微ZnO。这些结果从自由激发能和晶粒间连接强度的角度进行了讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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