Ag, Pd/Ag, and Au thick films growth using screen printing method for microstrip band pass filter application

I. Hermida, G. Wiranto, D. Mahmudin, K. Deni Permana, L. Utari, A. Setiawan
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Abstract

A study on fabrication of thick film Ag, Pd/Ag, and Au for microstrip band pass filter application using screen printing method has been carried out. Research carried out by making three band pass filter using conductor paste Au, Ag, and Pd/Ag. Band pass filters are designed at the operating center frequency 456 MHz, bandwidth of 60 MHz, 1 VSWR, and -93.55 dB loss. SEM, EDS and FTIR characterization conducted to determine morphology and content of microstrip band pass filter. Meanwhile, the performance of band pass filter was examined by using VNA SEM results indicate grain size conductor strip using Au, Ag, and Pd/Ag are 0.435 nm, 0.389 nm and 0.913 nm. The thickness of each conductor strips are 10.47μm, 12.98 μm and 14.15μm. Based on SEM results showed pores scattered on the surface of conductor strip, which causes the value loss increases. EDS and FTIR results indicate the presence of impurities C, N, O, H and Al on conductor strip of microstrip. The measurement of three band pass filter with VNA get the results that the center frequency 456 MHz, bandwidth of 60 MHz, 3 dB loss and 1.3 VSWR. Fabrication results indicate the value of loss and VSWR, higher than the design. It was due to conductor loss that occurs due to pore on the surface microstrip and also due to the impurity.
用丝网印刷法生长微带带通滤波器用的Ag、Pd/Ag和Au厚膜
研究了用丝网印刷法制备用于微带带通滤波器的银、钯/银和金厚膜。采用导电浆料Au、Ag和Pd/Ag制作三带通滤波器进行了研究。带通滤波器设计在工作中心频率456mhz,带宽60mhz, VSWR为1,损耗为-93.55 dB。通过SEM、EDS和FTIR表征确定微带带通滤波器的形貌和含量。同时,通过VNA SEM对带通滤波器的性能进行了测试,结果表明,Au、Ag和Pd/Ag的导体带的晶粒尺寸分别为0.435 nm、0.389 nm和0.913 nm。导体带的厚度分别为10.47μm、12.98 μm和14.15μm。SEM结果表明,导电带材表面散布着孔隙,导致导电带材损耗增大。能谱分析(EDS)和红外光谱分析(FTIR)结果表明,微带导体带材上存在C、N、O、H和Al杂质。用VNA对三带通滤波器进行测量,得到中心频率为456mhz,带宽为60mhz,损耗为3db,驻波比为1.3。制作结果表明,损耗值和驻波比均高于设计值。这是由于微带表面的孔隙和杂质造成的导体损耗。
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