Local Stress Analysis by XRD Single Crystal Method and Kossel Diffraction Applied to a Flip Chip Structure

A.-L. Lebaudya, R. Pescia, W. Kpobieb, M. Fendler
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Abstract

X-Ray Diffraction (XRD) is a very efficient experimental tool for strain/stress analysis at different scales, which makes possible to carry out some mappings in complex 3D flip chip assemblies. First, with single crystal method, both the chip and the substrate have been analyzed at the same positions, considering a 1mm2 step, in order to quantify the level of stress inside. Then Kossel microdiffraction has been tested for local stress analysis with a spatial resolution of a few micrometers. This method is set up in a Scanning Electron Microscope (SEM) which allows to select precisely the analyzed area, the probe volume is about 1ìm3 and the strain resolution is about 10-4. The work here proposed describes the means employed to perform the different XRD analyses on single crystals used in 3D integration structures, the experimental results are then compared to numerical Finite Elements simulations and are discussed.
用XRD单晶法和Kossel衍射分析倒装芯片结构的局部应力
x射线衍射(XRD)是一种非常有效的实验工具,可以在不同尺度上进行应变/应力分析,从而可以在复杂的3D倒装芯片组件中进行一些映射。首先,使用单晶方法,芯片和衬底都在相同的位置进行了分析,考虑到1mm2的步骤,以量化内部的应力水平。然后用科塞尔微衍射进行了局部应力分析,其空间分辨率为几微米。该方法建立在扫描电子显微镜(SEM)上,可以精确地选择分析区域,探针体积约为1ìm3,应变分辨率约为10-4。本文介绍了对三维集成结构中使用的单晶进行不同XRD分析的方法,并将实验结果与数值有限元模拟结果进行了比较和讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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