NDA: Near-DRAM acceleration architecture leveraging commodity DRAM devices and standard memory modules

Amin Farmahini Farahani, Jung Ho Ahn, Katherine Morrow, N. Kim
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引用次数: 241

Abstract

Energy consumed for transferring data across the processor memory hierarchy constitutes a large fraction of total system energy consumption, and this fraction has steadily increased with technology scaling. In this paper, we propose near-DRAM acceleration (NDA) architectures, which process data using accelerators 3D-stacked on DRAM devices comprising off-chip main memory modules. NDA transfers most data through high-bandwidth and low-energy 3D interconnects between accelerators and DRAM devices instead of low-bandwidth and high-energy off-chip interconnects between a processor and DRAM devices, substantially reducing energy consumption and improving performance. Unlike previous near-memory processing architectures, NDA is built upon commodity DRAM devices; apart from inserting through-silicon vias (TSVs) to 3D-interconnect DRAM devices and accelerators, NDA requires minimal changes to the commodity DRAM device and standard memory module architectures. This allows NDA to be more easily adopted in both existing and emerging systems. Our experiments demonstrate that, on average, our NDA-based system consumes 46% (68%) lower (data transfer) energy at 1.67× higher performance than a system that integrates the same accelerator logic within the processor itself.
NDA:接近DRAM的加速架构,利用商品DRAM设备和标准内存模块
跨处理器内存层次传输数据所消耗的能量占系统总能耗的很大一部分,并且随着技术的扩展,这一比例稳步增加。在本文中,我们提出了近DRAM加速(NDA)架构,该架构使用加速器3d堆叠在包含片外主存储模块的DRAM设备上处理数据。NDA通过加速器和DRAM设备之间的高带宽和低能量3D互连传输大部分数据,而不是处理器和DRAM设备之间的低带宽和高能量片外互连,从而大大降低了能耗并提高了性能。与以前的近内存处理架构不同,NDA是建立在商品DRAM设备上的;除了将硅通孔(tsv)插入3d互连DRAM设备和加速器之外,NDA需要对商品DRAM设备和标准内存模块架构进行最小的更改。这使得NDA更容易在现有和新兴系统中采用。我们的实验表明,平均而言,我们基于nda的系统消耗的(数据传输)能量比在处理器本身集成相同加速器逻辑的系统低46%(68%),性能提高1.67倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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