Effect of different TCO interfaces on the performances presented by hydrogenated amorphous silicon p-i-n solar cells

Abstract

In this paper we report results concerning the effect of the TCO interface on hydrogenated amorphous silicon (a-Si:H) p-i-n homojunction solar cells. Its correlation with dark current density-voltage (J-V) characteristics and spectral response, before and after white light-soaking degradation, is analysed. From this study, we conclude that the properties and stability of these devices are not only influenced by the a-Si:H film properties, but also by the properties of the transparent conductive electrode and its interface with the a-Si:H layer.