Influence of the power supply mode of leds on the resistance to exposure to gamma quants

Perspektivnye Materialy Pub Date : 2022-01-01 DOI:10.30791/1028-978x-2022-7-5-13

A. Gradoboev, K. N. Orlova, V. V. Sednev, F. Zhamaldinov

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Abstract

The paper presents results of a study of the influence of active and passive power modes on the resistance to gamma-quantum irradiation of the LED manufactured on the basis of AlGaAs multilayer heterostructures. Three characteristic stages of radiation power reduction are distinguished for the studied LEDs irrespective of irradiation supply mode. In this case, the second stage is described by a higher damage factor and the third stage is distinguished by the appearance of catastrophic failures. Two differently directed processes of radiation power variation are observed during the irradiation of LED in active modes. It is supposed that the first process is caused by the power reduction of LED emission due to the injection of the corresponding radiation defects. The second process is caused by a partial recovery of the emission power due to radiation, radiation-thermal, and/or electrostimulated annealing of a portion of the defects created. The observed recovery of the radiation power in the active supply mode of the LEDs during irradiation significantly increases their resistance to gamma-quantum irradiation.

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led供电方式对γ射线暴露电阻的影响

本文研究了有源和无源功率模式对基于AlGaAs多层异质结构的LED抗γ -量子辐照性能的影响。无论辐照供应方式如何，所研究的led都可以区分出三个特征阶段的辐射功率降低。在这种情况下，第二阶段被描述为更高的破坏因子，而第三阶段的特点是灾难性失效的出现。在LED主动模式下的辐照过程中，观察到两种不同方向的辐射功率变化过程。假设第一种工艺是由于注入相应的辐射缺陷导致LED发射功率降低所致。第二种工艺是由于产生的部分缺陷的辐射、辐射热和/或电刺激退火导致的发射功率的部分恢复而引起的。在主动供电模式下，led在辐照过程中辐射功率的恢复显著增加了其对γ -量子辐照的抵抗力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Perspektivnye Materialy

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