Operation-oriented solution to boost key performance of RRAM

Abstract

Based on the new finding on switching behavior, for the first time a new memory operation principle is proposed to control the switching and to achieve improved performance of oxide-based RRAM including device-to-device and cycle-to-cycle uniformity, RESET current, and window of RHRS/RLRS ratio. Furthermore, a numerical simulation method is developed to evaluate the validity of the new operation principle in scaled RRAM devices.