A 900-MHz T/R switch with a 0.8-dB insertion loss implemented in a 0.5-/spl mu/m CMOS process

F. Huang, K. O. Kenneth
{"title":"A 900-MHz T/R switch with a 0.8-dB insertion loss implemented in a 0.5-/spl mu/m CMOS process","authors":"F. Huang, K. O. Kenneth","doi":"10.1109/CICC.2000.852680","DOIUrl":null,"url":null,"abstract":"A single-pole, double-throw transmit/receive switch for 3.0-V applications has been fabricated in a 0.5-/spl mu/m CMOS process. The switch exhibits a 0.8-dB insertion loss and a 17-dBm P/sub 1dB/. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, and by minimizing the substrate resistances, while the high 1 dB compression point is achieved by DC biasing the input and output nodes.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":"78 1","pages":"341-344"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21

Abstract

A single-pole, double-throw transmit/receive switch for 3.0-V applications has been fabricated in a 0.5-/spl mu/m CMOS process. The switch exhibits a 0.8-dB insertion loss and a 17-dBm P/sub 1dB/. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, and by minimizing the substrate resistances, while the high 1 dB compression point is achieved by DC biasing the input and output nodes.
在0.5-/spl mu/m CMOS工艺中实现的插入损耗为0.8 db的900 mhz T/R开关
在0.5-/spl mu/m CMOS工艺中制备了用于3.0 v应用的单极双掷发射/接收开关。该开关具有0.8 db插入损耗和17dbm P/sub / 1dB/。低插入损耗是通过优化晶体管宽度和偏置电压以及最小化衬底电阻来实现的,而高1 dB压缩点是通过对输入和输出节点进行直流偏置来实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信