Small angle scattering of synchrotron radiation on nanosized CeO2 and CeO2-SnO2 thin films obtained by sol-gel dip-coating method

A Turković , P Dubc̆ek , Z Crnjak-Orel , S Bernstorff
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引用次数: 10

Abstract

Nanosized CeO2, and CeO2-SnO2, 100–500 nm thick, films on glass substrate were prepared using sol-gel dip-coating method procedure. The average grain size <R>, obtained by SAXS (small-angle X-ray scattering), varied with the number of dips for the CeO2-SnO2 samples. For the CeO2 films, obtained by dipping it 8 times, <R> increased compared to CeO2-SnO2 films, which were obtained by the same number of dips, from 4.4 to 5.3 nm. Specific surface areas of both these films were also determined and varied from 0.18 × 107 to 0.51 × 107 cm−1. SAXS measurements also revealed the layered structure of CeO2 and CeO2-SnO2 films.

溶胶-凝胶浸渍法制备的纳米CeO2和CeO2- sno2薄膜上同步辐射的小角散射
采用溶胶-凝胶浸渍法在玻璃衬底上制备了100 ~ 500 nm厚度的纳米CeO2和CeO2- sno2薄膜。由SAXS(小角度x射线散射)获得的CeO2-SnO2样品的平均晶粒尺寸<R>随浸出次数的变化而变化。浸渍8次得到的CeO2薄膜,<R>与相同浸光度获得的CeO2-SnO2薄膜相比,从4.4 nm增加到5.3 nm。这两种薄膜的比表面积也在0.18 × 107到0.51 × 107 cm−1之间变化。SAXS测量还揭示了CeO2和CeO2- sno2薄膜的层状结构。
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