FoM Optimization in Class-C Oscillators

IF 1.4 4区工程技术 Q2 ENGINEERING, MULTIDISCIPLINARY

Scientia Iranica Pub Date : 2023-06-18 DOI:10.24200/sci.2023.57472.5313

Alireza Nourbakhsh, A. Safarian, Sanaz Sadeghi

引用次数: 0

Abstract

—In this paper, a new approach to optimize phase noise and Figure-of-Merit (FoM) in class-C oscillators is presented. This approach recruits DC voltage of the common source node of the switching pair transistors as an indicator to achieve the best performance of a class-C oscillator. The proposed indicator has the advantages of not introducing any loading effect to the output node, and independency from PVT changes. The method is simple and applicable to any oscillator with class-C topology, and with some modifications it would be applied to other oscillator topologies like class-B. The idea is verified using theoretical analysis, and circuit simulations on 0.18 µ m CMOS technology at 2GHz oscillation frequency. Moreover, a discrete prototype is fabricated at 15MHz and measurement results are provided which further validate feasibility of this approach.

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c类振荡器的FoM优化

本文提出了一种优化c类振荡器相位噪声和性能图的新方法。该方法利用开关对晶体管共源节点的直流电压作为指标，实现c类振荡器的最佳性能。该指标具有不给输出节点引入任何加载效应，且不受PVT变化影响的优点。该方法简单，适用于任何具有c类拓扑的振荡器，并且经过一些修改将适用于其他振荡器拓扑，如b类。通过理论分析和2GHz振荡频率下0.18µm CMOS技术的电路仿真验证了该思想。并在15MHz频率下制作了离散样机，给出了测量结果，进一步验证了该方法的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Scientia Iranica 工程技术-工程：综合

CiteScore

2.90

自引率

7.10%

发文量

审稿时长

2 months

期刊介绍： The objectives of Scientia Iranica are two-fold. The first is to provide a forum for the presentation of original works by scientists and engineers from around the world. The second is to open an effective channel to enhance the level of communication between scientists and engineers and the exchange of state-of-the-art research and ideas. The scope of the journal is broad and multidisciplinary in technical sciences and engineering. It encompasses theoretical and experimental research. Specific areas include but not limited to chemistry, chemical engineering, civil engineering, control and computer engineering, electrical engineering, material, manufacturing and industrial management, mathematics, mechanical engineering, nuclear engineering, petroleum engineering, physics, nanotechnology.