Comparison of multiple-polysilicon-nanowire pH-sensors coated with different ALD-deposited high-k dielectric materials

Po-Yen Hsu, Chun-Yu Wu, Huang-Chung Cheng, You-Lin Wu, W.T. Chang, Yuan-Lin Shen, Che-Ming Chang, Chia-Chung Wang, Jing-Jenn Lin
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引用次数: 2

Abstract

Multiple poly-silicon nanowires (PS-NW's) coated with different high-k dielectric materials, HfO2, Al2O3, and TiO2, were fabricated and their pH sensing characteristics were compared. Sidewall spacer formation technique was used for the PS-NW's fabrication and all the high-k materials were deposited by atomic-layer-deposition (ALD). Following the high-k dielectric deposition, a 3-aminopropyltriethoxysilane (y-APTES) layer was coated as sensing membrane. It is found that the multiple PS-NW sensor coated with HfO2 exhibits the highest sensitivity and best reproducibility for pH sensing.
不同ald沉积高k介电材料涂层多多晶硅纳米线ph传感器的比较
制备了不同高k介电材料HfO2、Al2O3和TiO2包覆的多晶硅纳米线(PS-NW's),并比较了它们的pH敏感特性。PS-NW的制备采用侧壁间隔层形成技术,所有高k材料均采用原子层沉积(ALD)方法沉积。在高k介电沉积后,涂覆3-氨基丙基三乙氧基硅烷(y-APTES)层作为传感膜。结果表明,涂覆HfO2的多重PS-NW传感器具有最高的灵敏度和最佳的重现性。
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