E. Mounir, H. Mabchour, D. Ennajh, A. El oujdi, A. El Kaaouachi, B. Ait Hammou, A. Echchelh, S. Dlimi
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引用次数: 0
Abstract
In this work, we study the behavior of resistivity as a function of temperature and for
several samples of ZnSxSe1-x thin films with x = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0 respectively. In
fact, we re-analyze in our investigation experimental measurements obtained by M. Popa et al. [1]
in the range of temperature from 300 K to 500 K. We showed that the resistivity follows a nearest
neighbor site hopping conduction mechanism with 𝝆 = 𝝆𝟎𝐞𝐱𝐩 ( 𝑬𝒂
𝒌𝑩𝑻
) for very high temperatures
and Mott variable range hopping conduction with 𝝆 = 𝝆𝑪𝐞𝐱𝐩 (𝑻𝟎
𝑻 )𝟏/𝟒 for relatively low
temperatures. The crossover between the two regimes can be explained by the competition
between the localization length scale 𝝃𝒍𝒐𝒄and the hopping length scale 𝑹𝒉𝒐𝒑.
期刊介绍:
Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.