A DC model for the high electron mobility transistor (HEMT)

Abstract

A novel analytical HEMT model is developed. The conduction mechanism due to the 2-DEG (two-dimensional electron gas) and the parallel AlGaAs is included. The numerical calculations of n/sub s/ and n/sub t/ were fitted to two closed-form analytical expressions that are easily integrable along the channel and are smooth to avert any discontinuity in the model parameters. The current contribution due to the parasitic MESFET in AlGaAs relative to the total current was determined. Second-order effects were included in the model. The theoretical predictions of the model are compared with experimental data and are found to be in good agreement over a wide range of bias conditions.<>