The effect of SiO/sub 2/ contaminated silver rivets on contact spot degradation under various arcing properties

Electrical Contacts - 2007 Proceedings of the 53rd IEEE Holm Conference on Electrical Contacts Pub Date : 1993-09-27 DOI:10.1109/HOLM.1993.489690

H.A. Francisco, K. Koeneke, J. Wallace

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Abstract

Surface contamination introduced by deburring electrical contacts with mineral silicon (SiO/sub 2/), will affect the contact spot in different ways by varying the arcing properties. Those factors which affect contact resistance were investigated. The investigation demonstrated that contact spot degradation was caused by absorption of organic vapors during switching, rather than decomposition of the mineral silicon (SiO/sub 2/) on the surface of fine silver rivets. This degradation mechanism may be reduced by sustaining an arc at switching currents of 2, 5 and 10 amps at 12.5 VDC. Furthermore, increasing the contact force from 50 grams (0.5 N) to 100 grams (1 N) produced significant reduction in the kinetics of the degradation mechanism in the contact spot at low switching currents (2 amps). The degradation of the contact spot during switching was explained as interactions among mineral silicon (SiO/sub 2/) concentration on the rivet's surface, arcing properties and contact force used during switching.

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SiO/sub - 2/污染银铆钉对不同电弧性能下接触点退化的影响

用矿物硅(SiO/sub 2/)去除电触点毛刺所引起的表面污染会通过改变电弧特性以不同的方式影响触点。研究了影响接触电阻的因素。研究表明，接触点的降解是由开关过程中有机蒸气的吸收引起的，而不是由细银铆钉表面矿物硅(SiO/sub 2/)的分解引起的。这种退化机制可以通过在12.5 VDC的2、5和10安培的开关电流下保持电弧来减少。此外，在低开关电流(2安培)下，将接触力从50克(0.5 N)增加到100克(1 N)会显著降低接触点降解机制的动力学。开关过程中接触点的退化被解释为铆钉表面矿物硅(SiO/sub 2/)浓度、电弧性能和开关过程中使用的接触力之间的相互作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical Contacts - 2007 Proceedings of the 53rd IEEE Holm Conference on Electrical Contacts

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