Heterogeneous Gallium-Arsenide Lasers on Silicon-Nitride

2020 Conference on Lasers and Electro-Optics (CLEO) Pub Date : 2020-05-01 DOI:10.1364/cleo_at.2020.jth4a.6

Hyundai Park, Chong Zhang, M. Tran, T. Komljenovic

引用次数: 1

Abstract

We demonstrate heterogeneously integrated gallium arsenide (GaAs) on silicon nitride (SiN) lasers using wafer-scale integration operating at a wavelength below Si bandgap with high uniformity enabled by advanced lithography and optimized fabrication. The technology promises to revolutionize the fields of AR/VR and quantum technology among others.

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氮化硅上的非均相砷化镓激光器

我们在氮化硅(SiN)激光器上展示了砷化镓(GaAs)的异质集成，使用晶圆级集成，工作在低于Si带隙的波长下，通过先进的光刻和优化的制造实现了高均匀性。这项技术有望彻底改变AR/VR和量子技术等领域。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 Conference on Lasers and Electro-Optics (CLEO)

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