A 0.2 - 8 MS/s 10b flexible SAR ADC achieving 0.35 - 2.5 fJ/conv-step and using self-quenched dynamic bias comparator

H. S. Bindra, A. Annema, S. Louwsma, B. Nauta
{"title":"A 0.2 - 8 MS/s 10b flexible SAR ADC achieving 0.35 - 2.5 fJ/conv-step and using self-quenched dynamic bias comparator","authors":"H. S. Bindra, A. Annema, S. Louwsma, B. Nauta","doi":"10.23919/VLSIC.2019.8778093","DOIUrl":null,"url":null,"abstract":"A 10b flexible SAR ADC is presented incorporating a self-quenched dynamic bias comparator and a self-triggered asynchronous delay line. The ADC is fabricated in 65nm CMOS, occupies 0.04mm2 and has an ENOB > 9bit and SFDR >66dB for sampling rates from 0.2 to 8MS/s at supply voltages respectively from 0.7V to 1.3V with a Walden FoM from 0.35 to 2.5fJ/conv-step. Keywords: SAR ADC, flexible, Walden Figure-of-Merit, SNDR, dynamic bias.","PeriodicalId":6707,"journal":{"name":"2019 Symposium on VLSI Circuits","volume":"20 1","pages":"C74-C75"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2019.8778093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

A 10b flexible SAR ADC is presented incorporating a self-quenched dynamic bias comparator and a self-triggered asynchronous delay line. The ADC is fabricated in 65nm CMOS, occupies 0.04mm2 and has an ENOB > 9bit and SFDR >66dB for sampling rates from 0.2 to 8MS/s at supply voltages respectively from 0.7V to 1.3V with a Walden FoM from 0.35 to 2.5fJ/conv-step. Keywords: SAR ADC, flexible, Walden Figure-of-Merit, SNDR, dynamic bias.
一个0.2 - 8 MS/s的10b柔性SAR ADC,实现0.35 - 2.5 fJ/反步,采用自淬动态偏置比较器
提出了一种采用自淬动态偏置比较器和自触发异步延迟线的10b柔性SAR ADC。该ADC采用65nm CMOS制造,占地0.04mm2, ENOB > 9bit, SFDR >66dB,采样率为0.2至8MS/s,电源电压分别为0.7V至1.3V, Walden FoM为0.35至2.5fJ/ v-step。关键词:SAR ADC,柔性,瓦尔登曲线,SNDR,动态偏置。
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