Barrier layers as resonators on deep centers

Abstract

A response is given to the paper of L. S. Barman and A. A. Lebedev (Izv. Vyssh. Uchebn. Zaved. SSSR, Fiz., No. 12, 88–90 (1989)), and it is shown that the arguments given there are not satisfactory. New experimental data have been obtained for n+-p junctions in Si, where square reverse-bias pulses U < Ures are observed to shift the DLTS peaks. Here Ures is the magnitude of the pulse for which all activation-drift processes become activation-transit processes and the barrier layer operates as a freshly prepared resonator on deep centers (see the paper by P. T. Oreshkin, Elektronnaya Tekhnika, Ser. 3, Mikroelektronika, No. 4 (128), 12–20 (1988).